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KF4N20LD

KEC
Part Number KF4N20LD
Manufacturer KEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Nov 1, 2014
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet PDF File KF4N20LD PDF File

KF4N20LD
KF4N20LD

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for LED Lighting and switching mode power supplies.
FEATURES VDSS(Min.
)= 200V, ID= 3.
6A Drain-Source ON Resistance : RDS(ON)=1.
15 Qg(typ.
) =2.
9nC Vth(Max.
)= 2V (max) @VGS =10V H G F F KF4N20LD/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF4N20LD A C K D L B J E N M DIM MILLIMETERS _ 0.
20 A 6.
60 + _ 0.
20 6.
10 + B _ 0.
30 5.
34 + C _ 0.
20 D 0.
70 + _ 0.
15 E 2.
70 + _ 0.
10 2.
30 + F 0.
96 MAX G 0.
90 MAX H _ 0.
20 1.
80 + J _ 0.
10 K 2.
30 + _ 0.
50 + 0.
10 L _ 0.
10 M 0.
50 + 0.
70 MIN N MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above25 Tj Tstg ...


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