DatasheetsPDF.com

SF1001G

Taiwan Semiconductor
Part Number SF1001G
Manufacturer Taiwan Semiconductor
Description 10.0 AMPS. Glass Passivated Super Fast Rectifiers
Published Nov 3, 2014
Detailed Description SF1001G - SF1008G 10.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AB Features High efficiency, low VF High curr...
Datasheet PDF File SF1001G PDF File

SF1001G
SF1001G


Overview
SF1001G - SF1008G 10.
0 AMPS.
Glass Passivated Super Fast Rectifiers TO-220AB Features High efficiency, low VF High current capability High reliability High surge current capability Low power loss.
For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Mechanical Data Case: TO-220AB Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free.
solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C/10 seconds .
16”,(4.
06mm) from case.
Weight: 2.
24 grams Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20% SF SF SF Symbol SF Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .
375 (9.
5mm) Lead Length @TC = 100 oC Peak Forward Surge Current, 8.
3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 5.
0A Maximum DC Reverse Current @ T A=25 oC at Rated DC Blocking Voltage @ T A=100 oC Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range SF SF SF SF 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G Units V V V A A V RRM V RMS V DC I(AV) IFSM VF IR 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 500 350 500 600 420 600 10.
0 125 0.
975 10.
0 400 35 70 3.
5 -65 to +150 -65 to +150 50 o 1.
3 1.
7 V uA uA nS pF C/W o C o C Trr Cj R θJC TJ Storage Temperature Range T STG Notes: 1.
Reverse Recovery Test Conditions: IF=0.
5A, IR=1.
0A, IRR=0.
25A 2.
Measured at 1 MHz and Applied Reverse Voltage of 4.
0 V D.
C.
3.
Mounted on Heatsink Size of 2” x 3” x 0.
25” Al-plate.
Version: A06 RATINGS AND CHA...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)