DatasheetsPDF.com

FGH75N60SF

Fairchild Semiconductor
Part Number FGH75N60SF
Manufacturer Fairchild Semiconductor
Description 75A Field Stop IGBT
Published Nov 3, 2014
Detailed Description FGH75N60SF 600V, 75A Field Stop IGBT December 2008 FGH75N60SF 600V, 75A Field Stop IGBT Features • High Current Capabi...
Datasheet PDF File FGH75N60SF PDF File

FGH75N60SF
FGH75N60SF

Overview
FGH75N60SF 600V, 75A Field Stop IGBT December 2008 FGH75N60SF 600V, 75A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =2.
3V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications • Induction Heating, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.
for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C o o Ratings 600 ± 20 150 75 225 452 181 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max.
junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ.
- Max.
0.
276 40 Units o o C /W C /W ©2008 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FGH75N60SF Rev.
A FGH75N60SF 600V, 75A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH75N60SF Device FGH75N60SFTU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min.
Typ.
Max.
Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)