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7N60

KIA
Part Number 7N60
Manufacturer KIA
Description N-CHANNEL MOSFET
Published Nov 4, 2014
Detailed Description KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 1.Description The KIA7N60 is a high voltage MOSFET and is designed to h...
Datasheet PDF File 7N60 PDF File

7N60
7N60

Overview
KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 1.
Description The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
2.
Features „ „ „ „ „ „ 6.
9A, 600V, RDS(on)= 1.
1Ω @ VGS= 10 V Low gate charge ( typical 32nC) Low crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability 3.
Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 7 KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 4.
Absolute maximum ratings Parameter Drain-source voltage Tc=25 ºC Drain current Tc=100 ºC Drain current pulsed (note 1) Gate-source voltage Single pulsed avalanche energy (note 2) Avalanche current (note 1) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Tc=25 ºC Power dissipation derate above 25 ºC Operating and Storage temperature range Maximum lead temperature for soldering purposes,1/8’’ from case for 5 seconds Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ , TSTG TL (TC= 25 ºC , unless otherwise specified) Units Rating V 600 6.
9 A 4.
14 A A 27.
6 V ±30 mJ 275 A 7 mJ 8.
3 V/ns 4.
5 W 83 0.
67 W/ºC -55 ~ +150 ºC 300 ºC 5.
Thermal characteristics Parameter Thermal resistance,Junction-to-case Thermal resistance,Junction-to-ambient Symbol RθJC RθJA Rating 1.
5 62.
5 Unit ºC /W ºC /W 2 of 7 KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 6.
Electrical characteristics Parameter Off characteristics Drain-source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current Symbol BVDSS ΔBVDSS/ΔTJ IDSS (TJ=25°C,unless otherwise notes) Conditions Min Typ Max Unit VGS=0V,ID=250μA, TJ =25ºC VGS=0V,ID=250μA, TJ =150ºC ID=250μA, referenced to 25 ºC VDS=600V ,VGS=0V VDS=480V ,TC=125 ºC VGS=30V,VDS=0...


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