DatasheetsPDF.com

Si8416DB

Vishay
Part Number Si8416DB
Manufacturer Vishay
Description N-Channel MOSFET
Published Nov 9, 2014
Detailed Description www.vishay.com Si8416DB Vishay Siliconix N-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 8 RDS(on) () MAX. 0.02...
Datasheet PDF File Si8416DB PDF File

Si8416DB
Si8416DB

Overview
www.
vishay.
com Si8416DB Vishay Siliconix N-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 8 RDS(on) () MAX.
0.
023 at VGS = 4.
5 V 0.
025 at VGS = 2.
5 V 0.
030 at VGS = 1.
8 V 0.
040 at VGS = 1.
5 V 0.
095 at VGS = 1.
2 V ID (A) d 16 16 16 15 3 Qg (TYP.
) 17 nC MICRO FOOT® 1.
5 x 1 S S2 xxxxxxx 1 mm 1 1.
5 mm Backside View D3 4 1 6G 5S D Bump Side View Marking Code: xxxx = 8416 xxx = Date / lot traceability code Ordering Information: Si8416DB-T2-E1 (Lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Ultra-small 1.
5 mm x 1 mm maximum outline • Ultra-thin 0.
59 mm maximum height • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS D • Low on-resistance load switch for portable devices - Low power consumption, low voltage drop - Increased battery life - Space Saving on PCB G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Package Reflow Conditions c IR/Convection VDS VGS ID IDM IS PD TJ, Tstg LIMIT 8 ±5 16 e 16 e 9.
3 a, b 7.
4 a, b 20 11 2.
3 a, b 13 8.
4 2.
77 a, b 1.
77 a, b -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, f Maximum Junction-to-Case (Drain) g Steady State Notes a.
Surface mounted on 1" x 1" FR4 board.
b.
t = 10 s.
c.
Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d.
Case in defined as the top surface of the package.
e.
TC = 25 °C package limited.
f.
Maximum under steady state conditions is 85 °C/W.
g.
Case is defined as top surface of the package.
SYMBOL RthJA RthJC TYPICAL 37 7 MAXIMUM 45 9.
5 U...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)