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MBR40035CTR

GeneSiC
Part Number MBR40035CTR
Manufacturer GeneSiC
Description (MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode
Published Nov 10, 2014
Detailed Description MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM...
Datasheet PDF File MBR40035CTR PDF File

MBR40035CTR
MBR40035CTR

Overview
MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol VRRM VRMS VDC Tj Tstg Conditions MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 Unit V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per leg) Reverse current at rated DC blocking voltage (per leg) Symbol IF(AV) IFSM VF IR Conditions TC = 125 °C tp = 8.
3 ms, half sine IFM = 200 A, Tj = 25 °C Tj = 25 °C Tj ...


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