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TS820-600TG

American First Semiconductor
Part Number TS820-600TG
Manufacturer American First Semiconductor
Description SCRs
Published Nov 11, 2014
Detailed Description SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose ...
Datasheet PDF File TS820-600TG PDF File

TS820-600TG
TS820-600TG

Overview
SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
TS820-600T(800T)G Simplified outline TO-220AB 123 Features • Blocking voltage to 800 V • On-state RMS current to 8 A • Ultra low gate trigger current Applications • Motor control • Industrial and domestic lighting • Heating • Static switching Symbol ak g Pin 1 2 3 TAB Description cathode anode gate anode SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT RMS RMS on-state current ITSM Non-repetitive peak on-state current 600TG 800TG Value 600 800 8 73 Unit V A A SYMBOL Rth j-c PARAMETER Junction to case (DC) Rth j-a Junction to ambient (DC) @ 2010 Copyright By American First Semiconductor Value 20 70 UNIT /W /W Page 1/5 TS820-600T(800T)G Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER V VDRM RRM IT(RMS) I T ( AV ) ITSM I2t Repetitive peak off-state Voltages RMS on-state current Average on-state current Non-repetitive peak on-state current I2t for fusing CONDITIONS all conduction angles Half sine wave;<=111 half sine wave; Tj = 25 prior to surge T=10ms 600TG 800TG t=10ms t=8.
3ms Tj=25 MIN - - DIT/dt IGM VRGM PGM P G(AV) Tstg Tj Critical rate of rise of on-state current IG=2*I ,GT tr Peak gate current Tp=20 s Peak reverse gate voltage 100ns F=60Hz Tj=125 Tj=125 Peak gate power Average gate power Over any 20 ms period Storage temperature Operating junction Temperature - - -40 - MAX 600 800 8 5 70 73 24.
5 50 4 5 5 1 150 1252 UNIT V A A A A A2S A/ s A V W W TJ =25 C unless otherwise stated SYMBOL PARAMETER Static characteristics CONDITIONS IGT Gate trigger current VD=12V; RL=140 VGT Gate trigger voltage VD=12V; RL=140 VGD VD=V ;DRM RL=3.
3K R =GK 220 IL Latching current IG=1mA,...


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