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FIR20N120TDG

American First Semiconductor
Part Number FIR20N120TDG
Manufacturer American First Semiconductor
Description IGBT
Published Nov 11, 2014
Detailed Description IGBT Features  1200V,20A,Vce(on)(typ)=2.3V@Vge=15V  High speed switching  Higher system efficiency  Soft current tur...
Datasheet PDF File FIR20N120TDG PDF File

FIR20N120TDG
FIR20N120TDG

Overview
IGBT Features  1200V,20A,Vce(on)(typ)=2.
3V@Vge=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA using NPT technology General Description First semi NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), UPS,General inverter and other soft switching applications.
FIR20N120TDG PIN Connection TO-3P/TO-247 G C E Marking Diagram YAWW FIR20N120TD Y = Year A = Assembly Location WW = Work Week FIR20N120TD= Specific Device Code Absolute Maximum Ratings Symbol Parameter VCES VGES IC ICM IF IFM tsc PD TJ TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current ( TC=...


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