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MBR350NG

American First Semiconductor
Part Number MBR350NG
Manufacturer American First Semiconductor
Description 3.0A Leaded Type Schottky Barrier Rectifiers
Published Nov 12, 2014
Detailed Description Schottky Barrier Rectifier MBR320NG THRU MBR3100NG 3.0A Leaded Type Schottky Barrier Rectifiers - 20V-200V Features • ...
Datasheet PDF File MBR350NG PDF File

MBR350NG
MBR350NG

Overview
Schottky Barrier Rectifier MBR320NG THRU MBR3100NG 3.
0A Leaded Type Schottky Barrier Rectifiers - 20V-200V Features • Axial lead type devices for through hole design.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen free parts, ex.
MBR320NG-H.
Package outline DO-201AD .
220(5.
6) .
197(5.
0) DIA.
1.
0(25.
4) MIN.
.
375(9.
5) .
285(7.
2) Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, DO-201AD • Terminals : Solder plated, solderable per MIL-STD-202, Method 208 guranteed • Polarity :Color band denotes cathode end • Mounting Position : Any • Weight :Approximated 1.
10 gram .
052(1.
3) .
048(1.
2) DIA.
1.
0(25.
4) MIN.
Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.
2 Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.
3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN.
TYP.
MAX.
UNIT IO 3.
0 A IFSM 80 A IR RθJA CJ TSTG 0.
5 mA 30 20 OC/W 250 pF -65 +175 OC SYMBOLS MBR320NG MBR330NG MBR340NG MBR350NG MBR360NG MBR380NG MBR3100NG MBR3150NG MBR3200NG V RR * M 1 (V) 20 30 40 50 60 80 100 150 200 V * RMS 2 (V) 14 21 28 35 42 56 70 105 140 V * R 3 (V) 20 30 40 50 60 80 100 150 200 V * F 4 (V) Operating temperature TJ, (OC) 0.
55 -55 to +125 0.
70 0.
85 0.
90 0.
95 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.
0A @ 2010 Copyright By American First Semiconductor Page ...


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