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MBR830NG

American First Semiconductor
Part Number MBR830NG
Manufacturer American First Semiconductor
Description 8.0A Leaded Type Schottky Barrier Rectifiers
Published Nov 12, 2014
Detailed Description Schottky Barrier Rectifier MBR820NG THRU MBR8100NG 8.0A Leaded Type Schottky Barrier Rectifiers - 20V-100V Features • ...
Datasheet PDF File MBR830NG PDF File

MBR830NG
MBR830NG

Overview
Schottky Barrier Rectifier MBR820NG THRU MBR8100NG 8.
0A Leaded Type Schottky Barrier Rectifiers - 20V-100V Features • Axial lead type devices for through hole design.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen free parts, ex.
MBR820NG-H.
Package outline DO-201AD .
220(5.
6) .
197(5.
0) DIA.
1.
0(25.
4) MIN.
.
375(9.
5) .
285(7.
2) Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, DO-201AD • Terminals : Solder plated, solderable per MIL-STD-202, Method 208 guranteed • Polarity :Color band denotes cathode end • Mounting Position : Any • Weight :Approximated 1.
10 gram .
052(1.
3) .
048(1.
2) DIA.
1.
0(25.
4) MIN.
Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.
2 Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.
3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN.
IO IFSM TYP.
MAX.
UNIT 8.
0 A 150 A IR RθJA CJ TSTG 0.
5 mA 50 30 OC/W 550 pF -65 +175 OC SYMBOLS MBR820NG MBR830NG MBR840NG MBR850NG MBR860NG MBR880NG MBR8100NG V RR * M 1 (V) 20 30 40 50 60 80 100 V R * MS 2 (V) 14 21 28 35 42 56 70 V * R 3 (V) 20 30 40 50 60 80 100 V * F 4 (V) 0.
55 0.
70 0.
85 Operating temperature TJ, (OC) -55 to +125 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=8.
0A @ 2010 Copyright By American First Semiconductor Page 1/2 AVERAGE FORWARD CURRENT,(A) PEAK FORWARD SURGE CURRE...


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