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2SK4112

Toshiba
Part Number 2SK4112
Manufacturer Toshiba
Description Field Effect Transistor
Published Nov 12, 2014
Detailed Description 2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications •...
Datasheet PDF File 2SK4112 PDF File

2SK4112
2SK4112

Overview
... Low drain-source ON resistance: RDS (ON) = 0.
75 (typ.
) • High forward transfer admittance: |Yfs| = 5.
5S (typ.
) • Low leakage current: IDSS = 100 A (VDS = 600 V) • Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 600 ±30 10 30 45 251 10 4.
5...


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