DatasheetsPDF.com

IRGP6630DPbF

International Rectifier
Part Number IRGP6630DPbF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Nov 12, 2014
Detailed Description   VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Re...
Datasheet PDF File IRGP6630DPbF PDF File

IRGP6630DPbF
IRGP6630DPbF

Overview
  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 18A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF  TO‐247AC  C Collector GCE IRGP6630D‐EPbF  TO‐247AD  E Emitter Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)