DatasheetsPDF.com

W9NB90

STMicroelectronics
Part Number W9NB90
Manufacturer STMicroelectronics
Description STW9NB90
Published Nov 13, 2014
Detailed Description ® STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID S TW 9NB9 0 900 V <1Ω ...
Datasheet PDF File W9NB90 PDF File

W9NB90
W9NB90

Overview
® STW9NB90 N-CHANNEL 900V - 0.
85Ω - 9.
7A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID S TW 9NB9 0 900 V <1Ω 9.
7 A s TYPICAL RDS(on) = 0.
85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sy mb o l Parameter V DS V DGR VGS ID ID IDM (•) Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max.
Operating Junction Temperature (•) Pulse width limited by safe operating area Value 900 900 ± 30 9.
7 6 38 190 1.
52 4 -65 to 150 150 (1) I SD ≤ 9.
7A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns oC oC July 1999 1/8 STW9NB90 THERMAL DATA Rthj-case R th j -a mb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.
66 30 0.
1 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbo l IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanc...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)