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SD213DE


Part Number SD213DE
Manufacturer TEMIC
Title N-Channel Lateral DMOS FETs
Description The SD211DE/SST211 series consists of enhancementmode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency ap...
Features D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode Benefits D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Require...

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Datasheet SD213DE PDF File








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SD213DE : SD211 DE SERIES N-Channel Lateral DMOS FETs ~SilicDnix ~ incorporated The SD211 DE Series of single-pole, single-throw analog switches is designed for high speed switching in audio, video, and high-frequency applications. These devices are designed on the Sillconix DMOS process and utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. This series also features an integrated zener diode designed to protect the gate from electrical " Spikes" or overstress. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See SD5000 Series • SO-14 Array, See SD5400 Series • SOT-143, See SST21.

SD213DE-2 : The SD211DE-2 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211DE-2 may be used for "5-V analog switching or as a high speed driver of the SD214DE-2. The SD214DE-2 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. The SD211DE/213DE/215DE are available only in the “–2” extended hi-rel flow. The Vishay Siliconix “–2” flow complies with the requirements of MIL-PRF-19500 for JAN.




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