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LT1N60

Longtium Microelectronics
Part Number LT1N60
Manufacturer Longtium Microelectronics
Description N-channel MOSFET
Published Nov 14, 2014
Detailed Description Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features  High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V ...
Datasheet PDF File LT1N60 PDF File

LT1N60
LT1N60

Overview
Xi′an Longtium Microelectronics Technology Developing Co.
, Ltd.
Features  High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.
 This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
 This power MOSFET is usually used at AC adaptors and SMPS .
LT1N60 N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT C 1N60C 2 LT I 1N60C 3 LT D 1N60C Marking LT1N60C LT1N60C LT1N60C Package TO-92 TO-251 TO-252 Packaging TAPE TUBE REEL （2011-AUG Version1.
0）www.
longtiumic.
com 1/7 LT1N60 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current ...


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