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IRGP4760DPbF

International Rectifier
Part Number IRGP4760DPbF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Nov 15, 2014
Detailed Description   VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial ...
Datasheet PDF File IRGP4760DPbF PDF File

IRGP4760DPbF
IRGP4760DPbF

Overview
  VCES = 650V IC = 60A, TC =100°C tSC 5.
5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching Losses 5.
5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4760DPbF  TO‐247AC  C Collector E GC IRGP4760D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP4760DPbF IRGP4760D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4760DPbF IRGP4760D-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V  Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw Max.
650 90 60 144 192 74 45 ±20 325 160 -40 to +175 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Units V A  V W C Thermal Resistance Parameter RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min.
––– ––– ––– ––– Typ.
––– ––– 0.
24 40 Max.
0.
46 0.
97 ––– ––– Units °C...


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