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IRGP4760D-EPbF

Part Number	IRGP4760D-EPbF
Manufacturer	International Rectifier
Description	Insulated Gate Bipolar Transistor
Published	Nov 15, 2014
Detailed Description	VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial ...
Datasheet	IRGP4760D-EPbF PDF File

Overview

VCES = 650V IC = 60A, TC =100°C tSC 5.
5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching Losses 5.
5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4760DPbF TO‐247AC C Collector E GC IRGP4760D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP4760DPbF IRGP4760D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4760DPbF IRGP4760D-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = ...

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IRGP4760D-EPbF Insulated Gate Bipolar Transistor - International Rectifier

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