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WTI53D

Winsem Technology
Part Number WTI53D
Manufacturer Winsem Technology
Description POWER TRANSISTOR
Published Nov 17, 2014
Detailed Description Winsem Technology Corp. High Voltage NPN Transistor WTBV53DM(R) / WTI53D POWER TRANSISTOR TO-126 Pin Definition 1. Emi...
Datasheet PDF File WTI53D PDF File

WTI53D
WTI53D

Overview
Winsem Technology Corp.
High Voltage NPN Transistor WTBV53DM(R) / WTI53D POWER TRANSISTOR TO-126 Pin Definition 1.
Emitter 2.
Collector 3.
Base TO-126 R Pin Definition 1.
Base 2.
Collector 3.
Emitter Features • High Voltage • Very High Switch Speed • BVCEO : 400V • BVCBO : 800V • IC : 2.
5A • VCE(SAT) : max1V@Ic / IB=1A/ 0.
25A • Silicon Triple Diffused Type Application • Electronic Ballasts • Adapter • Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO126) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Version A12 Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Max Rating 800 400 9 2.
5 5 20 30 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp.
WTBV53DM(R) / WTI53D POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Ba...


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