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WTF268

Winsem Technology
Part Number WTF268
Manufacturer Winsem Technology
Description High Voltage NPN Transistor
Published Nov 17, 2014
Detailed Description Winsem Technology Corp. High Voltage NPN Power Transistor Features • High Voltage • High Switch Speed • BVCEO : 400V • B...
Datasheet PDF File WTF268 PDF File

WTF268
WTF268

Overview
Winsem Technology Corp.
High Voltage NPN Power Transistor Features • High Voltage • High Switch Speed • BVCEO : 400V • BVCBO : 700V • IC : 4A • VCE(SAT) : 1.
3V @ IC / IB = 2.
5A / 0.
6A WTX268 / WTF268 High Voltage NPN Transistor Application • Electronic Ballasts • Adapter • Lighting ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation (TO-220) Total Power Dissipation (TO-220F) Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse.
Pw=300uS, Duty≦ 2% Version A10 Symbol VCBO VCEO VEBO IC IB PBtot TJ TSTG Max rating 700 400 9 4 8 2 4 75 30 +150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp.
WTX268 / WTF268 High Voltage NPN Transistor ELECTRICAL SPECIFICATIONS Parameter Symbol Test Condition Min Typ Max Unit Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current BVCBO BVCEO BVEBO ICEO ICBO IC = 1mA, IB=0 IC = 10mA, IE=0 IE = 0.
1mA, IC=0 VCE = 400V, IE=0 VCB = 700V, IE=0 700 ─ 400 ─ 9─ ── ── ─V ─V ─V 250 uA 1 mA Emitter Cutoff Current IEBO VEB = 9V, IC=0 ── 1 mA DC Current Gain hFE1 hFE2 VCE = 5V, IC=10mA VCE = 5V, IC=2.
5A 15 ─ 8─ 32 V 28 VCE(SAT1) IC = 0.
8A, IB =0.
1A Collector-Emitter Saturation Voltage VCE(SAT2) IC = 2.
5A, IB =0.
6A ─ ─ 1.
1 V ─ ─ 1.
3 Base-Emitter Saturation Voltage VBE(SAT1) IC = 1A, IB =0.
2A VBE(SAT2) IC = 2.
5A, IB =0.
5A ─ ─ 1.
2 V ─ ─ 1.
3 Turn On Time Storage Time Fall Time ton tSTG tf Vcc = 125V, Ic = 2A, IB1=1B2=0.
4A, tp=25uS Duty Cycle ≦ 1% ─ ─ ─ 0.
2 0.
5 2.
2 3 0.
2 0.
5 uS uS uS Dynamic Parameter Symbol Test Condition Min Typ Max Unit Frequency fT VCE = 10V, IC=0.
5A Output Capacitance Cob VCB = 10V, f=0.
1MHz Note: Pulse test: pulse width ≦ 300uS, duty cycle ≦ 2% 4 ─ ── 65 ─ MHz pF Version A10 ...


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