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C1969

INCHANGE
Part Number C1969
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Nov 18, 2014
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain...
Datasheet PDF File C1969 PDF File

C1969
C1969

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6A 20 W 1.
7 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Rth j-c Thermal Resistance,Junction to Ambient 73.
5 ℃/W Thermal Resistance,Junction to Case 6.
25 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 60 25 V V V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current IE= 5mA, IC= 0 VCB= 30V; IE= 0 5V 0.
1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.
1 mA hFE DC Current Gain PO Output Power ηC Collector Efficiency IC= 10mA; VCE= 12V 10 180 16 18 VCC= 12V; Pin= 1W; f= 27MHz 60 70 W %  hFE Classifications XA B 10-25 20-45 35-70 CD 55-110 90-180 isc website：www.
iscsemi.
cn 2 ...


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