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AOC2411

Alpha & Omega Semiconductors
Part Number AOC2411
Manufacturer Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Published Nov 19, 2014
Detailed Description AOC2411 30V P-Channel MOSFET General Description Product Summary The AOC2411 uses advanced trench technology to provi...
Datasheet PDF File AOC2411 PDF File

AOC2411
AOC2411

Overview
AOC2411 30V P-Channel MOSFET General Description Product Summary The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V while retaining a 12V VGS(MAX) rating.
Vds ID (at VGS=-4.
5V) RDS(ON) (at VGS=-4.
5V) RDS(ON) (at VGS=-2.
5V) -30V -3.
4A < 45mΩ < 60mΩ WLCSP 1.
6x1.
6_4 Bottom View 3 D 2 D Top View Equivalent Circuit D SG Pin1(G) 41 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 TA=25°C VGS ID ISM Power Dissipation Note1 TA=25°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -3.
4 -52 0.
8 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient Note1 Maximum Junction-to-Ambient Note1 Maximum Junction-to-Foot(Drain) t ≤ 5s Steady-State Steady-State Symbol RθJA RθJF Typ 75 130 16 Max 90 155 20 Note 1.
Mounted on minimum pad PCB Note 2.
PW <300 µs pulses, duty cycle 0.
5% max Units V V A W °C Units °C/W °C/W °C/W Rev 1 : August 2012 www.
aosmd.
com Page 1 of 5 AOC2411 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Source-Source Breakdown Voltage IDSS Zero Gate Voltage Source Current IGSS VGS(th) Gate leakage current Gate Threshold Voltage RDS(ON) Static Source to Source On-Resistance gFS Forward Transconductance VFSD Diode Forward Voltage DYNAMIC PARAMETERS Note1 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Note1 Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) Gate Drain Charge Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Note 1: Guaranteed by design Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=-250µA VGS=-4.
5V, ID=-1A VGS=-2...


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