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AS4LC1M16E5

Part Number	AS4LC1M16E5
Manufacturer	Alliance Semiconductor
Description	3V 1M x 16 CMOS DRAM
Published	Nov 24, 2014
Detailed Description	AS4LC1M16E5 ® 3V 1M×16 CMOS DRAM (EDO) Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS...
Datasheet	AS4LC1M16E5 PDF File

Overview

AS4LC1M16E5 ® 3V 1M×16 CMOS DRAM (EDO) Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time • Low power consumption - Active: 500 mW max (-60) - Standby: 3.
6 mW max, CMOS DQ • Extended data out • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP II • 3V power supply (AS4LC1M16E5) • 5V tolerant I/Os; 5.
5V maximum VIH • Industrial and commercial temperature available Pin arrangement SOJ Vcc DQ1 DQ2 DQ3 DQ4 Vcc ...

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