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HFF640

HUASHAN ELECTRONIC
Part Number HFF640
Manufacturer HUASHAN ELECTRONIC
Description N-Channel MOSFET
Published Nov 27, 2014
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640 APPLICATIONSL High Voltage High-Speed Switching. ...
Datasheet PDF File HFF640 PDF File

HFF640
HFF640

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
N-Channel MOSFET HFF640 APPLICATIONSL High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS=1M ) VGSS Gate-Source Voltage ID *Drain Current Tc=25 * Drain current limited by maximumjunction temperature 5 5 ~1 5 0 150 43W 200V 200V ±20V 18A ELECTRICAL CHARACTERISTICS Ta=25 TO-220F 1 1G 2D 3S Symbol Characteristic s Min Typ BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 200 IGSS Gate –Source Leakage Current VGS(th) Gate Threshold Voltage 2.
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