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2SK1835

Renesas
Part Number 2SK1835
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Nov 30, 2014
Detailed Description 2SK1835 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 ...
Datasheet PDF File 2SK1835 PDF File

2SK1835
2SK1835

Overview
2SK1835 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) REJ03G0978-0400 Rev.
4.
00 Jun 04, 2008 D 1 2 3 G S 1.
Gate 2.
Drain (Flange) 3.
Source REJ03G0978-0400 Rev.
4.
00 Jun 04, 2008 Page 1 of 6 2SK1835 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 1500 ±20 4 10 4 125 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source c...


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