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IRL2505PBF

Part Number	IRL2505PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Dec 1, 2014
Detailed Description	l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operatin...
Datasheet	IRL2505PBF PDF File

Overview

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 is universally preferred for all commercialIndustrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Juction-to-Ambient www.
irf.
com G PD -95622 IRL2505PbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.
008Ω ID = 104A S TO-220AB Max.
104 74 360 200 1.
3 ± 16 500 54 20 5.
0 55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Typ.
––– 0.
50 ––– Max.
0.
75 ––– 62 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 1 8/3/04 IRL2505PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown ...

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IRL2505PBF HEXFET Power MOSFET - International Rectifier

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