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BAS16TT1G

ON Semiconductor
Part Number BAS16TT1G
Manufacturer ON Semiconductor
Description Silicon Switching Diode
Published Dec 3, 2014
Detailed Description BAS16TT1G Silicon Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant M...
Datasheet PDF File BAS16TT1G PDF File

BAS16TT1G
BAS16TT1G

Overview
BAS16TT1G Silicon Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Continuous Reverse Voltage VR 100 V Recurrent Peak Forward Current IF 200 mA Peak Forward Surge Current Pulse Width = 10 ms IFM(surge) 500 mA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C PD 225 mW 1.
8 mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 555 °C/W Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C PD 360 mW 2.
9 mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 345 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
FR−4 @ Minimum Pad 2.
FR−4 @ 1.
0 × 1.
0 Inch Pad http://onsemi.
com 3 CATHODE 1 ANODE 3 12 XX M G MARKING DIAGRAM CASE 463 SOT−416 STYLE 2 A6 MG G 1 = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† BAS16TT1G SOT−416 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013 1 May, 2013 − Rev.
4 Publication Order Number: BAS16TT1/D BAS16TT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Forward Voltage (IF = 1.
0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 100 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.
0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 W) (Figure...


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