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BSM200GB170DLC

eupec
Part Number BSM200GB170DLC
Manufacturer eupec
Description IGBT
Published Dec 10, 2014
Detailed Description Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Höchstzulässige Werte / Ma...
Datasheet PDF File BSM200GB170DLC PDF File

BSM200GB170DLC
BSM200GB170DLC

Overview
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Tvj = 25°C Kollektor-Dauergleichstrom DC-collector current TC = 80 °C TC = 25 °C Periodischer Kollektor Spitzenstrom repetitive peak collctor current tP = 1 ms, TC = 80°C Gesamt-Verlustleistung total power dissipation TC = 25°C, Transistor Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw.
current tp = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, Tvj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min.
VCES IC,nom.
IC ICRM Ptot VGES IF IFRM I2t VISOL 1700 200 400 400 1660 +/- 20V 200 400 11 3,4 V A A A W V A A k A2s kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 200A, VGE = 15V, Tvj = 25°C IC = 200A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 9mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V .
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+15V Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1700V, VGE = 0V, Tvj = 25°C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C prepared by: Alfons Wiesenthal approved by: Dr.
Schilling date of publication: 2002-07-04 revision: 3 VCE sat min.
- typ.
2,6 3,1 max.
3,2 3,6 VGE(th) 4,5 5,5 6,5 V V V QG - 2,4 - µC Cies - 15 - nF Cres - 0,7 - nF ICES - - 5 mA IGES - - 400 nA 1(8) BSM200GB170DLC_3.
xls Technische Information / Technical Information IGBT-Module IGBT-Modules ...


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