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SUP60N06-12P

Vishay
Part Number SUP60N06-12P
Manufacturer Vishay
Description N-Channel 60-V (D-S) MOSFET
Published Dec 10, 2014
Detailed Description N-Channel 60-V (D-S) MOSFET SUP60N06-12P Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.012 at VGS = 10 ...
Datasheet PDF File SUP60N06-12P PDF File

SUP60N06-12P
SUP60N06-12P

Overview
N-Channel 60-V (D-S) MOSFET SUP60N06-12P Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.
012 at VGS = 10 V ID (A) 60d Qg (Typ.
) 33 TO-220AB FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Rectifier • Power Supplies D GD S Top View Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free) SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.
1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 60 ± 20 60d 54d 80 40 80 100b 3.
25 - 55 to 150 Unit V A m...


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