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TC58BYG0S3HBAI6

Toshiba
Part Number TC58BYG0S3HBAI6
Manufacturer Toshiba
Description 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Published Dec 11, 2014
Detailed Description TC58BYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet PDF File TC58BYG0S3HBAI6 PDF File

TC58BYG0S3HBAI6
TC58BYG0S3HBAI6

Overview
TC58BYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BYG0S3HBAI6 is a single 1.
8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BYG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The TC58BYG0S3HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.
FEATURES • Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 1004 blocks Max 1024 blocks • Power supply VCC = 1.
7V to 1.
95V • Access time Cell array to register 40 µs typ.
Serial Read Cycle 25 ns min (CL=30pF) • Program/Erase time Auto Page Program Auto Block Erase 330 µs/page typ.
3.
5 ms/block typ.
• Operating current Read (25 ns cycle) Program (avg.
) Erase (avg.
) Standby 30 mA max.
30 mA max 30 mA max 50 µA max • Package P-VFBGA67-0608-0.
80-001 (Weight: 0.
095 g typ.
) • 8bit ECC for each 528Bytes is implemented on a chip.
1 2012-08-31C PIN ASSIGNMENT (TOP VIEW) 1 2 34567 8 A NC NC NC N...


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