DatasheetsPDF.com

GT15J121

Toshiba Semiconductor
Part Number GT15J121
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 GT15J121 High Power Swi...
Datasheet PDF File GT15J121 PDF File

GT15J121
GT15J121

Overview
TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 GT15J121 High Power Switching Applications Fast Switching Applications ●　 ●　 ●　 The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) ●　 :tr=0.
03μs(typ.
) High speed :tf=0.
08μs(typ.
) ●　 :Eon=0.
23mJ(typ.
) Low switching loss :Eoff=0.
18mJ(typ.
) Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range DC 1ms Symbol Ratings Unit VCES VGES IC ICP PC Tj Tstg 600 ±20 15 45 35 150 -55～150 V V A W ℃ ℃ 2001-7- 1/2 TOSHIBA Preliminary Electrical Characteristics(Ta=25℃) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time S...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)