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GT25G101

Toshiba Semiconductor
Part Number GT25G101
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Inp...
Datasheet PDF File GT25G101 PDF File

GT25G101
GT25G101

Overview
...ut Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : VCE (sat)=8V (Max.
) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC 1ms Ta=25°C Tc=25°C SYMBOL VCES VGES IC ICP PC PC Tj Tstg RATING 400 ±25 25 170 1.
3 75 150 −55~150 UNIT V V A W °C °C JEDEC JEITA TOSHIBA Weight : 1.
5g ― ― 2−10S1C ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Gate Leakage Current Collector Cut−off Current Gate−Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−on Time Fall Time...


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