DatasheetsPDF.com

MGA-83563

Agilent
Part Number MGA-83563
Manufacturer Agilent
Description Power Amplifier
Published Dec 12, 2014
Detailed Description +22 dBm PSAT 3V Power Amplifier for 0.5 – 6 GHz Applications Technical Data MGA-83563 Features • +22 dBm PSAT at 2.4 GH...
Datasheet PDF File MGA-83563 PDF File

MGA-83563
MGA-83563

Overview
+22 dBm PSAT 3V Power Amplifier for 0.
5 – 6 GHz Applications Technical Data MGA-83563 Features • +22 dBm PSAT at 2.
4 GHz, 3.
0 V +23 dBm PSAT at 2.
4 GHz, 3.
6 V • 22 dB Small Signal Gain at 2.
4 GHz • Wide Frequency Range 0.
5 to 6 GHz • Single 3 V Supply • 37% Power Added Efficiency • Ultra Miniature Package Applications • Amplifier for Driver and Output Applications Equivalent Circuit (Simplified) Vd1 Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking Vd1 1 GND 2 INPUT 3 83x 6 OUTPUT and Vd2 5 GND 4 GND Note: Package marking provides orientation and identification; “x” is date code.
OUTPUT and Vd2 Description Agilent’s MGA-83563 is an easyto-use GaAs RFIC amplifier that offers excellent power output and efficiency.
This part is targeted for 3V applications where constant-envelope modulation is used.
The output of the amplifier is matched internally to 50 Ω.
However, an external match can be added for maximum efficiency and power out (PAE = 37%, Po = 22 dBm).
The input is easily matched to 50 Ω.
Due to the high power output of this device, it is recommended for use under a specific set of operating conditions.
The thermal sections of the Applications Information explain this in detail.
The circuit uses state-of-the-art PHEMT technology with proven reliability.
On-chip bias circuitry allows operation from single supply voltage.
INPUT BIAS BIAS GROUND 2 MGA-83563 Absolute Maximum Ratings Symbol V Pin Tch TSTG Parameter Maximum DC Supply Voltage CW RF Input Power Channel Temperature Storage Temperature Units V dBm °C °C Absolute Maximum[1] 4 +13 165 -65 to 150 POWER DISSIPATED AS HEAT (mW) Pd = (VOLTAGE) x (CURRENT) – (Pout) 1 x 106 Hrs MTTF 800 700 600 500 400 300 200 100 0 10 30 50 70 90 110 130 150 CASE TEMPERATURE (°C) Temperature/Power Derating Curve.
Thermal Resistance[2]: θch to c = 175°C/W Notes: 1.
Operation of this device above any one of these limits may cause permanent damage.
2.
TC = 25°C (TC is defined to be t...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)