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W11NK100Z

STMicroelectronics
Part Number W11NK100Z
Manufacturer STMicroelectronics
Description STW11NK100Z
Published Dec 12, 2014
Detailed Description STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STW...
Datasheet PDF File W11NK100Z PDF File

W11NK100Z
W11NK100Z


Overview
STW11NK100Z N-CHANNEL 1000V - 1.
1Ω - 8.
3A TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STW11NK100Z 1000 V < 1.
38 Ω 8.
3 A 230 W s TYPICAL RDS(on) = 1.
1 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY 3 2 1 TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES ORDERING INFORMATION SALES TYPE STW11NK100Z MARKING W11NK100Z PACKAGE TO-247 PACKAGING TUBE December 2003 1/9 STW11NK100Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.
5KΩ) dv/dt (1) Peak Diode Recovery voltage slope Tj Operating Junction Temperature Tstg Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤ 8.
3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) GATE-S...



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