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GT50G321

Toshiba Semiconductor
Part Number GT50G321
Manufacturer Toshiba Semiconductor
Description silicon N-channel IGBT
Published Mar 23, 2005
Detailed Description GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance...
Datasheet PDF File GT50G321 PDF File

GT50G321
GT50G321

Overview
GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.
30 µs (typ.
) (IC = 60 A) · Low saturation voltage: VCE (sat) = 1.
8 V (typ.
) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Emitter-collector foward current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 400 ±25 50 100 15 30 130 150 −55 to 150 Equivalent Cir...


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