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IPP50R520CP

Infineon
Part Number IPP50R520CP
Manufacturer Infineon
Description Power Transistor
Published Dec 16, 2014
Detailed Description CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • Hi...
Datasheet PDF File IPP50R520CP PDF File

IPP50R520CP
IPP50R520CP

Overview
CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R520CP 550 V 0.
520 Ω 13 nC PG-TO220 CoolMOS CP is designed for: • Hard- & Softswitching SMPS topologies • DCM PFC for Lamp Ballast • PWM for Lamp Ballast, PDP and LCD TV Type IPP50R520CP Package PG-TO220 Marking 5R520P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS T C=100 °C T C=25 °C I D=2.
5 A, V DD=50 V I D=2.
5 A, V DD=50 V V DS=0.
.
.
400 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.
5 screws Rev.
2.
0 page 1 Value 7.
1 4.
5 15 166 0.
25 2.
5 50 ±20 ±30 66 -55 .
.
.
150 60 Unit A mJ A V/ns V W °C Ncm 2007-11-06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPP50R520CP Value 3.
8 15 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded Soldering temperature, wavesoldering only allowed at leads T sold 1.
6 mm (0.
063 in.
) from case for 10 s min.
Values typ.
Unit max.
- - 1.
9 K/W - - 62 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 500 - -V Gate threshold voltage V GS(th) V DS=V GS, I...


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