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FQP16N25C

Fairchild Semiconductor
Part Number FQP16N25C
Manufacturer Fairchild Semiconductor
Description 250V N-Channel MOSFET
Published Dec 23, 2014
Detailed Description FQP16N25C/FQPF16N25C FQP16N25C/FQPF16N25C 250V N-Channel MOSFET QFET ® General Description These N-Channel enhancemen...
Datasheet PDF File FQP16N25C PDF File

FQP16N25C
FQP16N25C


Overview
FQP16N25C/FQPF16N25C FQP16N25C/FQPF16N25C 250V N-Channel MOSFET QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features • 15.
6A, 250V, RDS(on) = 0.
27Ω @VGS = 10 V • Low gate charge ( typical 41 nC) • Low Crss ( typical 68 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D { GDS TO-220 FQP Series GD S TO-220F FQPF Series G{ ● ◀▲ ● ● { S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature.
FQP16N25C FQPF16N25C 250 15.
6 15.
6 * 9.
8 9.
8 * 62.
4 62.
4 * ± 30 410 15.
6 13.
9 5.
5 139 43 1.
11 0.
34 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient FQP16N25C 0.
9 0.
5 62.
5 FQPF16N25C 2.
89 -62.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev.
A, March 2004 FQP16N25C/FQPF...


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