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IXFK32N100P

IXYS
Part Number IXFK32N100P
Manufacturer IXYS
Description Power MOSFET
Published Dec 26, 2014
Detailed Description PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK32N100P IXFX32N100P...
Datasheet PDF File IXFK32N100P PDF File

IXFK32N100P
IXFK32N100P

Overview
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK32N100P IXFX32N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 TO-247 Maximum Ratings 1000 1000 ± 30 ± 40 32 75 16 1.
5 V V V V A A A J 10 960 -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 1.
13/10 20.
.
120/4.
5.
.
27 10 6 V/ns W °C °C °C °C °C Nm/lb.
in.
Nm/lb.
g g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
1000 V 3.
5 ...


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