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IXFK32N90P

IXYS
Part Number IXFK32N90P
Manufacturer IXYS
Description Power MOSFET
Published Dec 26, 2014
Detailed Description Advance Technical Information PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsi...
Datasheet PDF File IXFK32N90P PDF File

IXFK32N90P
IXFK32N90P

Overview
Advance Technical Information PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK32N90P IXFX32N90P VDSS ID25 RDS(on) = 900V = 32A < 300mΩ TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 900 900 ±30 ±40 32 80 16 2 V V V V A A A J 15 960 -55 to +150 150 -55 to +150 300 260 1.
13/10 20.
.
120 /4.
5.
.
27 10 6 V/ns W °C °C °C °C °C Nm/lb.
in.
N/lb.
g g G D S PLUS247 (IXFX) Tab G DS Tab G = Gate S = Source D = Drain Tab = Drain Features z Low RDS(on) and QG z Avalanche Rated z Low Package Inductance z Fast Intrinsic Rectifier Advantages Symbol T...


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