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N25Q512A

Part Number	N25Q512A
Manufacturer	Micron
Description	NOR Flash Memory
Published	Dec 26, 2014
Detailed Description	512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q5...
Datasheet	N25Q512A PDF File

Overview

512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A Features • Stacked device (two 256Mb die) • SPI-compatible serial bus interface • Double transfer rate (DTR) mode • 2.
7–3.
6V single supply voltage • 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode • 54 MHz (MAX) clock frequency supported for all protocols in DTR mode • Dual/quad I/O instruction provides increased throughput up to 54 MB/s • Supported protocols – Extended SPI, dual I/O, and quad I/O – DTR mode supported on all • Execute-in-place (XIP) mode for all three protocols – Configurable via volatile or nonvolatile registers – Enables memory to work in XIP mode directly af- ter power-on • PROGRAM/ERASE SUSPEND operations • Available protocols – Available READ operations – Quad or dual output fast read – Quad or dual I/O fast read • Flexible to fit application – Configurable number of dummy cycles – Output buffer configurable • Software reset • Additional reset pin for selected part numbers 1 • 3-byte and 4-byte addressability mode supported • 64-byte, user-lockable, one-time programmable (OTP) dedicated area • Erase capability – Subsector erase 4KB uniform granularity blocks – Sector erase 64KB uniform granularity blocks – Single die erase • Write protection – Software write protection applicable to every 64KB sector via volatile lock bit – Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2, BP3, and TB) – Additional smart protections, available upon request • Electronic signature – JEDEC-standard 2-byte signature (BA20h) – Unique ID code (UID): 17 read-only bytes, including: Two additional extended device ID bytes to identify device factory options; and customized factory data (14 bytes) • Minimum 100,000 ERASE cycles per sector • More than 20 years data retention • Packages – JEDEC-standard, all RoHS-compliant – V-PDFN-8/8mm x 6mm (also known as SO...

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N25Q512A NOR Flash Memory - Micron

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