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IXFM10N90

IXYS
Part Number IXFM10N90
Manufacturer IXYS
Description Power MOSFETs
Published Dec 27, 2014
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 I...
Datasheet PDF File IXFM10N90 PDF File

IXFM10N90
IXFM10N90

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 V DSS 900 V 900 V 900 V I D25 10 A 12 A 13 A trr £ 250 ns R DS(on) 1.
1 W 0.
9 W 0.
8 W Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS VDGR V GS VGSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90 900 V 900 V ±20 V ±30 V 10 A 12 A 13 A 40 A 48 A 13 A 10 A 12 A 13 A 30 mJ 5 V/ns 300 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g TO-204 AA (IXFM) (TAB) G D G = Gate, S = Source, D = Drain, TAB = Drain Features l International standard packages l Low R HDMOSTM proce...


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