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BDX53F

Part Number	BDX53F
Manufacturer	TGS
Description	Complementary Silicon Power Darlington Ttransistors
Published	Dec 27, 2014
Detailed Description	TIGER ELECTRONIC CO.,LTD Complementary Silicon Power Darlington Ttransistors Product specification BDX53F / BDX54F DE...
Datasheet	BDX53F PDF File

Overview

TIGER ELECTRONIC CO.
,LTD Complementary Silicon Power Darlington Ttransistors Product specification BDX53F / BDX54F DESCRIPTION The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications.
The complementary PNP types are BDX54F respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 5V Collector Current IC 8.
0 A Base Current IB 0.
2 A Total Dissipation at Max.
Operating Junction Temperature Storage Temperature Ptot 60 W Tj 150 oC Tstg -55~150 oC TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current ICBO VCB=160V, IE=0 Collector Cut-off Current ICEO VCE=80V, IB=0 Emitter Cut-off Current IEBO...

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