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C3747

INCHANGE
Part Number C3747
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Dec 29, 2014
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3747 DESCRIPTION ·Good Linearity ...
Datasheet PDF File C3747 PDF File

C3747
C3747

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3747 DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Complement to Type 2SA1470 APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 7A ICM Collector Current-Pulse Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature Tstg Storage Temperature 10 A 25 W 2.
0 150 ℃ -55~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3747 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.
5A; IB= 0.
175A ICBO Collector Cutoff Current VCB= 40V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A , IB1= -IB2= 0.
15A; RL= 6.
67Ω; VCC= 20V MIN TYP.
MAX UNIT 60 V 80 V 5V 0.
4 V 100 μA 100 μA 70 280 100 MHz 0.
1 μs 0.
5 μs 0.
1 μs  hFE Classifications QRS 70-140 100-200 140-280 isc Website：www.
iscsemi.
cn 2 ...


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