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C3710A

Toshiba Semiconductor
Part Number C3710A
Manufacturer Toshiba Semiconductor
Description 2SC3710A
Published Jun 3, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A 2SC3710A High-Power Switching Applications Unit:...
Datasheet PDF File C3710A PDF File

C3710A
C3710A

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A 2SC3710A High-Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
4 V (max) • High-speed switching: tstg = 1.
0 μs (typ.
) • Complementary to 2SA1452A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base current IB 2 A Collector power dissipation (Tc = 25°C) PC 30 W JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 1.
7 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2010-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 80 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 1 V, IC = 1 A hFE (2) VCE (sat) VCE = 1 V, IC = 6 A IC = 6 A, IB = 0.
3 A VBE (sat) IC = 6 A, IB = 0.
3 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz Turn-on time ton 20 μs Input IB1 Output IB1 IB2 5Ω Switching time Storage time Fall time tstg IB2 VCC ≈ 30 V tf IB1 = 0.
3 A...


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