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C4002

ON Semiconductor
Part Number C4002
Manufacturer ON Semiconductor
Description NPN Triple Diffused Planar Silicon Transistor
Published Jan 5, 2015
Detailed Description 2SC4002 Ordering number : ENN2960A 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applicat...
Datasheet PDF File C4002 PDF File

C4002
C4002

Overview
2SC4002 Ordering number : ENN2960A 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage.
• Adoption of MBIT process.
• Excellent hFE linearity.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage fT VCE(sat) VCE=30V, IC=10mA IC=50mA, IB=5mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) IC=50mA, IB=5mA V(BR)CBO IC=10µA, IE=0 Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance V(BR)CEO V(BR)EBO Cob IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=30V, f=1MHz Reverse Transfer Capacitance Cre * : The 2SC4002 is classified by 50mA hFE as follows : VCB=30V, f=1MHz Rank D E hFE 60 to 120 100 to 200 Ratings 400 400 5 200 400 600 150 --55 to +150 Unit V V V mA mA mW °C °C min 60* 400 400 5 Ratings typ max Unit 0.
1 µA 0.
1 µA 200* 70 MHz 0.
6 V 1.
0 V V V V 4 pF 3 pF Continued on next page.
© 2011, SCILLC.
All rights reserved.
Jan-2011, Rev.
0 Rev.
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Parameter Turn-ON Time Turn-OFF Time Symbol ton toff Conditions See specified test circuit.
See specified test circuit.
Ratings min typ max 0.
25 5.
0 Unit µs µs Package Dimensions unit : mm 2003B 5.
0 4.
0 4.
0 0.
45 0.
5 0.
45 0.
44 0.
6 2.
0 14.
0 5.
0 Switching Time Test Circuit PW=20µs D.
C.
≤1% INPUT IB1 IB2 OUTPUT VR 50Ω RB + 100µF RL + 470µF VCC=1...


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