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2N04H4

Infineon Technologies
Part Number 2N04H4
Manufacturer Infineon Technologies
Description Power-Transistor
Published Jan 5, 2015
Detailed Description OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt...
Datasheet PDF File 2N04H4 PDF File

2N04H4
2N04H4

Overview
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Product Summary VDS 40 V RDS(on) 4 mΩ ID 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 Package Ordering Code P- TO220 -3-1 Q67060-S6014 P- TO263 -3-2 Q67060-S6013 P- TO262 -3-1 Q67060-S6014 Marking 2N04H4 2N04H4 2N04H4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C ID Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 80 320 660 25 6 ±20 300 -55.
.
.
+175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2003-05-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Symbol Values Unit min.
typ.
max.
RthJC RthJA RthJA - 0.
35 0.
5 K/W - - 62 - - 62 - - 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS ID=250µA Zero gate voltage drain current VDS=40V, VGS=0V, Tj=25°C VDS=40V, VGS=0V, Tj=125°C2) V(BR)DSS 40 - -V VGS(th) 2.
1 3 4 IDSS µA - 0.
01 1 - 1 100 Gate-source leakage current VGS=20V, VDS=0V Drain-source on-state resistance VGS=10V, ID=80A IGSS - 1 100 nA RDS(on) - 3.
4 4 mΩ 1Current limited by bondwire ; with an RthJC = 0.
5K/W the chip is able to carry ID= 200A at 25°C, for detailed in...


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