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AP60SL600H

Advanced Power Electronics
Part Number AP60SL600H
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Jan 7, 2015
Detailed Description Advanced Power Electronics Corp. AP60SL600H Preliminary N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Chara...
Datasheet PDF File AP60SL600H PDF File

AP60SL600H
AP60SL600H

Overview
Advanced Power Electronics Corp.
AP60SL600H Preliminary N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G D S Description AP60SL600 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
VDS @ Tj,max.
RDS(ON) ID3 650V 0.
6Ω 7A G D S TO-252(H) Only reference Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 +20 V 7A 4.
4 A 18 A PD@TC=25℃ Total Power Dissipation 56.
8 W PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy5 2W 5 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Value 2.
2 62.
5 Units ℃/W ℃/W Data & specifications subject to change without notice 1 20141105V0.
1 AP60SL600H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Ciss Input Capacitance C...


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