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BC337-40

STMicroelectronics

SMALL SIGNAL NPN TRANSISTORS

BC337-25 ® BC337-40 Type BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Marking BC337-25 BC337-40 s ...


STMicroelectronics

BC337-40

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BC337-25 ® BC337-40 Type BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Marking BC337-25 BC337-40 s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY s THE PNP COMPLEMENTARY TYPES ARE BC327-25 AND BC327-40 RESPECTIVELY APPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT s SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current Ptot Total Dissipation at TC = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature June 2002 Value 50 45 5 0.5 1 625 -65 to 150 150 Unit V V V A A mW oC oC 1/4 BC337-25 / BC337-40 THERMAL DATA Rthj-amb Thermal Resistance Junction-Ambient Rthj-case Thermal Resistance Junction-Case Max Max 200 83.3 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (IE = 0) Collector-Emitter Breakdown Voltage (IB = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage VEB = 5 V IC = 10 µA IC = 10 mA IE = 10 µA IC = 500 mA IB = 50 ...




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