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SGA1263Z

RFMD
Part Number SGA1263Z
Manufacturer RFMD
Description DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
Published Jan 12, 2015
Detailed Description SGA1263Z DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA1263Z DCto4000MHz SILICON GERMANIUM HBT CASCAD...
Datasheet PDF File SGA1263Z PDF File

SGA1263Z
SGA1263Z

Overview
SGA1263Z DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA1263Z DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz.
This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V.
These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering Optimum Technology cellular, ISM, and narrowband PCS bands.
Matching® Applied GaAs HBT GaAs MESFET Isolation vs.
Frequency InGaP HBT 0 SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT -2 0 dB -4 0 Si CMOS -6 0 Si BJT GaN HEMT -8 0 100 500 900 1900 2400 3500 6000 InP HBT RF MEMS LDMOS Frequency MHz Features  DCto4000MHz Operation  Single Supply Voltage  Excellent Isolation, >50dB at 900 MHz  50 In/Out, Broadband Match for Operation from DC4 GHz  Unconditionally Stable Applications  Buffer Amplifier for Oscillator Applications  Broadband Gain Blocks  IF Amp Parameter Specification Min.
Typ.
Max.
Unit Condition Small Signal Gain 15 17 19 dB 850MHz 12 15 17 dB 1950MHz Output Power at 1dB Compression -13.
0 -9.
5 dBm 1950 MHz Output Third Order Intercept Point -1.
5 1.
0 dBm 1950 MHz Determined by Return Loss (<-10dB) MHz Input Return Loss 9.
5 11.
2 dB 1950MHz Output Return Loss 78 dB 1950MHz Noise Figure 2.
5 4.
0 dB 1950MHz Device Voltage 2.
5 2.
8 3.
1 V Thermal Resistance 255 °C/W Test Conditions: VS=5V, ID=8mA Typ.
, OIP3 Tone Spacing=1MHz, POUT per tone=-20dBm, RBIAS=270, TL=25°C, ZS=ZL=50 DS111011 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLAR...


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