DatasheetsPDF.com

FCPF11N60NT

Fairchild Semiconductor
Part Number FCPF11N60NT
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Jan 14, 2015
Detailed Description FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, ...
Datasheet PDF File FCPF11N60NT PDF File

FCPF11N60NT
FCPF11N60NT

Overview
FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.
8 A, 299 mΩ November 2013 Features • RDS(on) = 255 mΩ (Typ.
) @ VGS = 10 V, ID = 5.
4 A • Ultra Low Gate Charge (Typ.
Qg = 27.
4 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 130 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature.
S FCP11N60N FCPF11N60NT 600 ±30 10.
8 10.
8* 6.
8 6.
8* 32.
4 32.
4* 201.
7 3.
7 0.
94 100 20 94.
0 32.
1 0.
75 0.
26 -55 to +150 300 Unit V V A A mJ A mJ V/ns V/ns W W/oC oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP11N60N 1.
33 62.
5 FCPF11N60NT 3.
9...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)