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HFF11N60S

HUASHAN ELECTRONIC
Part Number HFF11N60S
Manufacturer HUASHAN ELECTRONIC
Description N-Channel MOSFET
Published Jan 14, 2015
Detailed Description Shantou Huashan Electronic Devices Co., Ltd. HFF11N60S N-Channel Enhancement Mode Field Effect Transistor █ General D...
Datasheet PDF File HFF11N60S PDF File

HFF11N60S
HFF11N60S

Overview
Shantou Huashan Electronic Devices Co.
, Ltd.
HFF11N60S N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
█ Features • 10.
8A, 600V(See Note), RDS(on) <0.
75Ω@VGS = 10 V • Fast switching • 100% avalanche tes...


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